Chemical vapor deposition growth of WS2 crystals

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dc.contributor.authorShaikenova, A.
dc.contributor.authorBeisenov, R.
dc.contributor.authorMuratov, D.
dc.date.accessioned2019-05-21T08:15:06Z
dc.date.available2019-05-21T08:15:06Z
dc.date.issued2018-06-29
dc.description.abstractThe synthesis and characterization of WS2 single crystals grown by chemical vapor deposition (CVD) method thru sulfurization of tungsten oxide thin layer on quartz substrate studied. Synthesis of WS2 carried out at 800-1000 °C in CVD system. The sulphur vapor transported by argon gas (500 sccm). Obtained WS2 single crystals characterized by optical microscope, Raman and photoluminescence analysis. Optical microscope analysis demonstrated that triangular WS2 domains with single-phase crystal structure formed. The thickness of WS2 is 6 layers, which determined by Raman spectroscopy. Photoluminescence spectroscopy analysis revealed a strong peak between 600- 660 nm, typically for a monolayer WS2 crystal, where the band gap is equal to 1.96 eV.ru_RU
dc.identifier.citationShaikenova A. Chemical vapor deposition growth of WS2 crystals/Shaikenova A., Beisenov R., Muratov D.//Eurasian Physical Technical Journal. - 2018.- Vol.15 - № 2(30).- P. 66-69.ru_RU
dc.identifier.issn2413-2179
dc.identifier.urihttps://rep.buketov.edu.kz//handle/data/5970
dc.language.isoenru_RU
dc.publisherPublishing House of the KarSU named after academician E.A.Buketovru_RU
dc.relation.ispartofseriesEurasian Physical Technical Journal;Vol.15, № 2(30)
dc.subjecttransition metal dichalcogenideru_RU
dc.subjectchemical vapor depositionru_RU
dc.subjecttungsten oxideru_RU
dc.titleChemical vapor deposition growth of WS2 crystalsru_RU
dc.typeArticleru_RU

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