Chemical vapor deposition growth of WS2 crystals

Abstract

The synthesis and characterization of WS2 single crystals grown by chemical vapor deposition (CVD) method thru sulfurization of tungsten oxide thin layer on quartz substrate studied. Synthesis of WS2 carried out at 800-1000 °C in CVD system. The sulphur vapor transported by argon gas (500 sccm). Obtained WS2 single crystals characterized by optical microscope, Raman and photoluminescence analysis. Optical microscope analysis demonstrated that triangular WS2 domains with single-phase crystal structure formed. The thickness of WS2 is 6 layers, which determined by Raman spectroscopy. Photoluminescence spectroscopy analysis revealed a strong peak between 600- 660 nm, typically for a monolayer WS2 crystal, where the band gap is equal to 1.96 eV.