Modeling of morphology of semiconductor surfaces with quantum nanowires

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dc.contributor.authorZhanabaev, Z.Zh.
dc.contributor.authorGrevtseva, T.Yu.
dc.contributor.authorImanbayeva, A.K.
dc.contributor.authorZhanabayeva, A.E.
dc.date.accessioned2019-04-24T08:52:29Z
dc.date.available2019-04-24T08:52:29Z
dc.date.issued2014
dc.description.abstractA possibility to model morphology of surfaces of semiconductor films containing quantum-sized structures is analyzed. For this aim we use our new map for fractal evolution of measure and method for reconstruction of dynamical chaos by one-dimensional sequence of data. Intermittent distribution of concentration of current carriers typical for images of semiconductor surfaces obtained by modern methods of microscopy was obtained. Distribution of current carriers is presented in phase plane. Using of the approach give us a possibility to model semiconductor surfaces containing horizontal and vertical quantum nanowires.ru_RU
dc.identifier.citationModeling of morphology of semiconductor surfaces with quantum nanowires/Z.Zh. Zhanabaev, T.Yu. Grevtseva, A.K. Imanbayeva [et al.] //Eurasian Physical Technical Journal. - 2014.- Vol. 11, No.1(21).-P.47-53ru_RU
dc.identifier.issn1811-1165
dc.identifier.urihttps://rep.buketov.edu.kz:443//handle/data/5388
dc.language.isoenru_RU
dc.publisherPublishing House of the KarSU named after E.A.Buketovru_RU
dc.relation.ispartofseriesEurasian Physical Technical Journal;Vol.11, № 2(22)
dc.subjectmorphologyru_RU
dc.subjectsemiconductor filmsru_RU
dc.subjectdynamical chaosru_RU
dc.subjectquantum-sized structureru_RU
dc.subjectmap for fractal evolutionru_RU
dc.subjectquantum nanowiresru_RU
dc.titleModeling of morphology of semiconductor surfaces with quantum nanowiresru_RU
dc.typeArticleru_RU

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