Simulation and comparative analysis of high-efficiency hit solar cells based on P-type and N-type crystalline silicon substrates

Abstract

This paper presents numerical simulation and comparative analysis of solar cells with a heterojunction on thin amorphous silicon (HIT) based on crystalline silicon substrates with p- and n-type conductivity. The study focuses on the influence of substrate thickness, dopant concentration, interface quality, and layer architecture on the key photovoltaic parameters: open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (η). Simulations were performed using the AFORS-HET software, which accounts for carrier transport and recombination processes. The results demonstrate that n-type silicon-based devices exhibit higher Voc and FF values, reduced sensitivity to light-induced (LID) and potential-induced degradation (PID), and deliver 1.5–2% higher efficiency compared to p-type devices under identical conditions. Optimization of the substrate thickness (100–200 μm) and doping concentration (1015– 1016 cm-3) enables achieving conversion efficiencies above 25%. Literature reports further confirm the potential of n-type silicon, where record efficiencies exceeding 26% have already been achieved. Therefore, the implementation of n-type silicon in HIT architectures represents the most promising pathway for the development of high-efficiency and stable photovoltaic devices.