F- И F2-ЦЕНТРЫ В LiF, ОБЛУЧЕННОМ ИОНАМИ КРИПТОНА С ЭНЕРГИЕЙ 117 МэВ

Abstract

Энергиясы 117 МэВ Kr ионымен бөлме температурасында сəулеленген LiF кристалындағы радиациялық ақаулар абсорбциялық спектроскопия əдісімен зерттелген. Бояу орталық- тарының пайда болу тиімділігі флюенске тікелей байланыстылығы көрсетілген. Тректердің пайда болуы туралы соңғы түсініктер бойынша шолу жасалған. First irradiation experiments on the cyclotron ion accelerator DC-60 (Astana) are presented. Investigation of radiation defects induced by the irradiation of LiF crystals with 117 MeV Kr ions (fluences of 6·1010–3.6·1011 ions/sm2) at room temperature has been performed using the method of UV-VIS optical absorption. Based on the optical spectra the creation of singlet F centers and their more complex aggregates were studied as a function of ion fluence and energy loss. With increasing fluence track overlapping takes place, single F centers saturate, and more complex color centers (Fn centers, F center aggregates and colloids) are created. The volume saturation concentration of F centers NF is about 1019cm-3, which is in agreement with the results of other investigations. The efficiency of F center creation, track radius has been estimated using ORIGIN program (r≈12nm, average energy creation ΔEF ≈1500eV). The present state of investigations of processes and mechanisms of defect formation in materials under ion bombardment is considered.