Modeling of semiconductor nanostructures by use of methods of dynamical chaos
| dc.contributor.author | Zhanabaev, Z.Zh. | |
| dc.contributor.author | Turmukhambetov, A.Zh. | |
| dc.contributor.author | Grevtseva, T.Yu. | |
| dc.contributor.author | Assilbayeva, R.B. | |
| dc.date.accessioned | 2019-05-20T11:20:59Z | |
| dc.date.available | 2019-05-20T11:20:59Z | |
| dc.date.issued | 2015-12-23 | |
| dc.description.abstract | We present a possibility to model morphology of nanostructured semiconductor films by use of equation for fractal evolution of measure. Using of the theory let us to describe structure of films containing different quantum-size structures including quantum dots, quantum nanowires and quantum wells. We have investigated influence of different parameters on morphology of nanocluster semiconductor films. Histograms describing distribution of nanostructures on height have been constructed. Results of numeric analysis have been compared with corresponding experimental data. | ru_RU |
| dc.identifier.citation | Zhanabaev, Z.Zh. Modeling of semiconductor nanostructures by use of methods of dynamical chaos / Z.Zh. Zhanabaev, A.Zh. Turmukhambetov, T.Yu. Grevtseva [et al.] // -Eurasian Physical Technical Journal. – 2015. – Vol.12. – № 2(24). – P. 17-22. | ru_RU |
| dc.identifier.issn | 2413-2179 | |
| dc.identifier.issn | 1811-1165 | |
| dc.identifier.uri | https://rep.buketov.edu.kz//handle/data/5952 | |
| dc.language.iso | en | ru_RU |
| dc.publisher | Publishing House of the KarSU named after E.A.Buketov | ru_RU |
| dc.relation.ispartofseries | Eurasian Physical Technical Journal;Vol.12, № 2(24) | |
| dc.subject | nanocluster | ru_RU |
| dc.subject | semiconductor | ru_RU |
| dc.subject | fractal | ru_RU |
| dc.subject | morphology | ru_RU |
| dc.subject | dynamical chaos | ru_RU |
| dc.title | Modeling of semiconductor nanostructures by use of methods of dynamical chaos | ru_RU |
| dc.type | Article | ru_RU |