Genesis of nanostructures formation in amorphous hydrogenated semiconductors A-SI1-X CX: H

dc.contributor.authorKumekov, M.E.
dc.date.accessioned2019-05-16T11:12:05Z
dc.date.available2019-05-16T11:12:05Z
dc.date.issued2010-12-20
dc.description.abstractOn the basis of the analysis of experimental data it is shown that at increase in the maintenance of carbon more, than on 50 % (х from above 0,5) there is a cardinal change of photoluminescent and photo-electric properties thin films а-Si1-XCX:H connected with nanoclusterization the films structures.ru_RU
dc.identifier.citationKumekov, M.E. Genesis of nanostructures formation in amorphous hydrogenated semiconductors A-SI1-X CX: H / M.E. Kumekov // Eurasian Physical Technical Journal. – 2010. – Vol.7. – № 2(14). – P. 9-11.ru_RU
dc.identifier.issn1811-1165
dc.identifier.urihttps://rep.buketov.edu.kz//handle/data/5902
dc.language.isoenru_RU
dc.publisherYe.A.Buketov Karaganda State University Publishing houseru_RU
dc.relation.ispartofseriesEurasian Physical Technical Journal;Vol. 7 № 2(14)
dc.subjectthin filmsru_RU
dc.subjectnanoclusterizationru_RU
dc.subjectsemiconductorsru_RU
dc.subjectexciting quantumsru_RU
dc.subjectstructurizationru_RU
dc.titleGenesis of nanostructures formation in amorphous hydrogenated semiconductors A-SI1-X CX: Hru_RU
dc.typeArticleru_RU

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