Electronic mechanisms of instability in semiconductor structures

dc.contributor.authorChirkova, L.V.
dc.contributor.authorErmaganbetov, K.T.
dc.contributor.authorArinova, E.T.
dc.date.accessioned2019-03-12T06:39:23Z
dc.date.available2019-03-12T06:39:23Z
dc.date.issued2015-12-30
dc.description.abstractSemiconductor crystals are difficult dynamic systems in which emergence of electric not stability is possible (failure of current, spontaneous fluctuations of current or tension, switching and a hysteresis in volt — the ampere characteristic, etc.). This instability meets in many materials, in different temperature areas and at various levels of excitement. In article instability of some branches of volts — the ampere characteristic of semiconductor devices — existence of the negative differential conductivity (NDC) of S-and N-of types is considered. It is shown that NDC are connected with not stability operated by tension or current. The main electronic mechanisms resulting in negative differential conductivity are considered.ru_RU
dc.identifier.citationChirkova L.V. Electronic mechanisms of instability in semiconductor structures /L.V.Chirkova, K.T.Ermaganbetov, E.T.Arinova //Қарағанды универисетінің хабаршысы. ФИЗИКА Сериясы.=Вестник Карагандинского университета. Серия ФИЗИКА.=Bulletin of the Karaganda University. PHYSICS Series.-2015.-№4.-Р.-4-11ru_RU
dc.identifier.issn0142-0843
dc.identifier.urihttps://rep.buketov.edu.kz:80//handle/data/4230
dc.language.isoenru_RU
dc.publisherYe.A.Buketov Karaganda State University Publishing houseru_RU
dc.relation.ispartofseriesBulletin of the Karaganda University. PHYSICS series;№4(80)/2015
dc.subjecta semiconductor crystalru_RU
dc.subjectinstabilityru_RU
dc.subjectnegative differential conductivityru_RU
dc.subjectvolt — the ampere characteristicru_RU
dc.titleElectronic mechanisms of instability in semiconductor structuresru_RU
dc.title.alternativeШалаөткізгіш құрылымдарындағы орнықсыздықтардың электрондық табиғатыru_RU
dc.title.alternativeЭлектронные механизмы неустойчивостей в полупроводниковых структурахru_RU
dc.typeArticleru_RU

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