Mapping hole mobility in PTB7 films at nanoscale

dc.contributor.authorAlekseev, A.M.
dc.contributor.authorYedrissov, A.T.
dc.contributor.authorIlyassov, B.R.
dc.contributor.authorHedley, G.J.
dc.contributor.authorSamuel, I.D.W.
dc.contributor.authorKharintsev, S.S.
dc.date.accessioned2022-03-25T10:22:26Z
dc.date.available2022-03-25T10:22:26Z
dc.date.issued2019
dc.description.abstractThe nanoscale hole mobility in organic semiconducting polymer PTB7 is quantified by using conductive-AFM (C-AFM) measurements in space charge limited (SCLC) regime. The obtained current map of the neat PTB7 film is explained in terms of non-uniform built-in voltage and variations of hole mobility. For mobility estimation, the semi-empirical model of SCLC, known from previous works, was modified and applied. It is found that the values of built-in voltage in C-AFM measurements are usually several times larger than ones derived from macroscopic measurements. It is also shown that value of hole mobility in PTB7 film depends on location and varies in more than two times. These mobility variations are connected with nanoscale film structure revealed by other methods.ru_RU
dc.identifier.citationMapping hole mobility in PTB7 films at nanoscale/A.M. Alekseev[et al.]//IOP Conference Series: Materials Science and Engineering.-2019.-Vol 699(1)ru_RU
dc.identifier.issn17578981
dc.identifier.urihttps://rep.buketov.edu.kz//handle/data/12079
dc.language.isoenru_RU
dc.publisherIOP Conference Series: Materials Science and Engineeringru_RU
dc.relation.ispartofseries;Vol 699(1)
dc.titleMapping hole mobility in PTB7 films at nanoscaleru_RU
dc.typeArticleru_RU

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