Decoration of wide bandgap semiconducting materials for enhancing photoelectrochemical efficiency of PEC systems

Abstract

The production of photoanodes based on wide-band gap materials such as TiO2 is economically viable because of the low cost of synthesis methods. Contrary to economic aspects, wide-band gap semiconductor materials have a significant disadvantage due to low sensitivity to photons of visible light. To increase the photoactive parameters of the material of the electrodes in the visible range, the methods for decorating nanomasses of titanium dioxide by narrow-gap semiconductors are used. One of the most suitable narrow-gap semiconductor materials are CdS and Fe2O3. Controlled deposition of such materials on wide-gap semiconductors allows to regulate both the diffusion time of charge carriers and the band structure of TiO2/Fe2O3 and TiO2/CdS composites. The dimensions of the structure of the photoelectrode material of the cell have a large influence on the characteristics of the photocatalyst created. Thus, in the hematite structures of nanometre dimension, the rate of recombination of charge carriers fades away in comparison with bulk structures. Reducing the size of CdS structures also positively affects the nature of the photocatalytic reaction.