Influence of copper ions on recombinational processes in KDP
| dc.contributor.author | Kim, L.M. | |
| dc.contributor.author | Tagaeva, B.S. | |
| dc.date.accessioned | 2017-10-16T10:45:34Z | |
| dc.date.accessioned | 2017-10-16T10:45:38Z | |
| dc.date.available | 2017-10-16T10:45:34Z | |
| dc.date.available | 2017-10-16T10:45:38Z | |
| dc.date.issued | 2009 | |
| dc.description.abstract | It is investigated ТL of the crystals KDP doped by cooper ions. The cooper ions occupy cationic units or interstitial depending on a way of activation. It is established the Cu2+ as ions replacement and interstitial raise thermal stability of a matrix defects and give new peak ТL at 140К. The presence of replacement ions Cu2+ in a lattice KDP results in occurrence of the new TL peak with a maximum at 240К. The assumption is made, that it is connected to formation of the centres Cu+. | ru_RU |
| dc.identifier.citation | Kim L.M. Influence of copper ions on recombinational processes in KDP/L.M. Kim, B.S. Tagaeva//Eurasian Physical Technical Journal.-2009.-Vol.6.-No1(11).-P.11-15 | ru_RU |
| dc.identifier.uri | https://rep.buketov.edu.kz/handle/data/1718 | |
| dc.language.iso | en | ru_RU |
| dc.publisher | Publishing House of the KarSU named after E.A.Buketov | ru_RU |
| dc.relation.ispartofseries | Eurasian Physical Technical Journal;Vol.6.-No1(11) | |
| dc.subject | crystals KDР | ru_RU |
| dc.subject | TL curve | ru_RU |
| dc.subject | doze irradiation | ru_RU |
| dc.subject | optical density | ru_RU |
| dc.subject | thermal stability | ru_RU |
| dc.subject | thermal activation | ru_RU |
| dc.title | Influence of copper ions on recombinational processes in KDP | ru_RU |
| dc.type | Article | ru_RU |